Tian-Jian Chu, : rechercher sur Z-Library

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1

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen,

Journal:

The Journal of Supercritical Fluids

Année:

2014

Langue:

english

Fichier:

PDF, 2.74 MB

english, 2014

2

Surface scattering mechanisms of tantalum nitride thin film resistor

Chen, Huey-Ru, Chen, Ying-Chung, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Shih, Chih-Cheng, Chuang, Nai-Chuan, Wang, Kao-Yuan

Journal:

Nanoscale Research Letters

Année:

2014

Langue:

english

Fichier:

PDF, 713 KB

english, 2014

3

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

Su, Yu-Ting, Liu, Hsi-Wen, Chen, Po-Hsun, Chang, Ting-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Pan, Chih-Hung, Wu, Cheng-Hsien, Yang, Chih-Cheng, Wang, Min-Chuan, Zhang, Shengdong, Wang, Hao, Sze, Sim

Journal:

IEEE Journal of the Electron Devices Society

Année:

2018

Langue:

english

Fichier:

PDF, 1017 KB

english, 2018

4

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Zhang, Rui, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chen, Kai-Huang, Lou, Jen-Chung, Chen, Jung-Hui, Young, Tai-Fa, Shih, Chih-Cheng, Yang, Ya-Liang, Pan, Yin-Chih, Chu, Tian-Jian, Hua

Journal:

Nanoscale Research Letters

Année:

2013

Langue:

english

Fichier:

PDF, 484 KB

english, 2013

5

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Chen, Yi-Jiun, Chen, Hsin-Lu, Young, Tai-Fa, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Lou, Jen-Chung, Chu, Tian-Jian, Chen, Jung-Hui, Bao, Ding-Hua, Sze, Si

Journal:

Nanoscale Research Letters

Année:

2014

Langue:

english

Fichier:

PDF, 470 KB

english, 2014

6

On dam-break wave propagation and its implication to sediment erosion

Hsu, Hung-Chu, Torres-Freyermuth, Alec, Hsu, Tian-Jian, Hwung, Hwung-Hweng, Kuo, Ping-Chiao

Journal:

Journal of Hydraulic Research

Année:

2014

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2014

7

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Kuan-Chang Chang,, Tsung-Ming Tsai,, Ting-Chang Chang,, Kai-Huang Chen,, Rui Zhang,, Zhi-Yang Wang,, Jung-Hui Chen,, Tai-Fa Young,, Min-Chen Chen,, Tian-Jian Chu,, Syuan-Yong Huang,, Yong-E

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 686 KB

english, 2014

8

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

Syu, Yong-En, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Chen, Min-Chen, Yang, Ya-Liang, Shih, Chih-Cheng, Chu, Tian-Jian, Chen,

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 547 KB

english, 2013

9

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

Chang, Kuan-Chang, Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Shih, Chih-Cheng, Chu, Tian-Jian, Chen, Jian-Yu, Su, Yu-Ting, Jiang,

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 553 KB

english, 2013

10

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Wu, Hsing-Hua, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Chu, Tian-Jian, Chen, Jian-Yu, Pan, Chih-Hung, Su, Yu-Ting, Syu, Yong-En, Tung, C

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 415 KB

english, 2013

11

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Chang, Kuan-Chang, Zhang, Rui, Chang, Ting-Chang, Tsai, Tsung-Ming, Lou, J. C., Chen, Jung-Hui, Young, Tai-Fa, Chen, Min-Chen, Yang, Ya-Liang, Pan, Yin-Chih, Chang, Geng-Wei, Chu, Tian-Jian, Shih, Chi

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 457 KB

english, 2013

12

Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

Chu, Tian-Jian, Tsai, Tsung-Ming, Chang, Ting-Chang, Chang, Kuan-Chang, Zhang, Rui, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Huang, Jen-Wei, Lou, Jen-Chung, Chen, Min-Chen, Huang, Syuan-Yong, C

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 566 KB

english, 2014

13

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

Chen, Yi-Jiun, Chang, Kuan-Chang, Chang, Ting-Chang, Chen, Hsin-Lu, Young, Tai-Fa, Tsai, Tsung-Ming, Zhang, Rui, Chu, Tian-Jian, Ciou, Jian-Fa, Lou, Jen-Chung, Chen, Kai-Huang, Chen, Jung-Hui, Zheng,

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 451 KB

english, 2014

14

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

Chu, Tian-Jian, Chang, Ting-Chang, Tsai, Tsung-Ming, Wu, Hsing-Hua, Chen, Jung-Hui, Chang, Kuan-Chang, Young, Tai-Fa, Chen, Kai-Hsang, Syu, Yong-En, Chang, Geng-Wei, Chang, Yao-Feng, Chen, Min-Chen, L

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 379 KB

english, 2013

15

Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process

Chang, Kuan-Chang, Tsai, Tsung-Ming, Zhang, Rui, Chang, Ting-Chang, Chen, Kai-Huang, Chen, Jung-Hui, Young, Tai-Fa, Lou, J. C., Chu, Tian-Jian, Shih, Chih-Cheng, Pan, Jhih-Hong, Su, Yu-Ting, Syu, Yong

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 977 KB

english, 2013

16

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Wu, Hsing-Hua, Chen, Jung-Hui, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen, Min-Chen, Pan, Jhih-Hong, Chen, J

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 413 KB

english, 2013

17

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure

Chang, Kuan-Chang, Rui Zhang,, Ting-Chang Chang,, Tsai, Tsung-Ming, Tian-Jian Chu,, Hsin-Lu Chen,, Chih-Cheng Shih,, Chih-Hung Pan,, Yu-Ting Su,, Pei-Jung Wu,, Sze, Simon M.

Année:

2014

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2014

18

Physical and chemical mechanisms in oxide-based resistance random access memory

Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng,

Journal:

Nanoscale Research Letters

Année:

2015

Langue:

english

Fichier:

PDF, 4.01 MB

english, 2015

19

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Chu, Tian-Jian, Tsai, Tsung-Ming, Chang, Ting-Chang, Chang, Kuan-Chang, Pan, Chih-Hung, Chen, Kai-Huang, Chen, Jung-Hui, Chen, Hsin-Lu, Huang, Hui-Chun, Shih, Chih-Cheng, Syu, Yong-En, Zheng, Jin-Chen

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 977 KB

english, 2014

20

Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

Chen, Ji, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Pan, Chih-Hung, Zhang, Rui, Lou, Jen-Chung, Chu, Tian-Jian, Wu, Cheng-Hsien, Chen, Min-Chen, Hung, Ya-Chi, Syu, Yong-En, Zheng, Jin-Ch

Journal:

IEEE Electron Device Letters

Année:

2015

Langue:

english

Fichier:

PDF, 556 KB

english, 2015

21

Resistance random access memory

Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Sze, Simon M.

Journal:

Materials Today

Année:

2015

Langue:

english

Fichier:

PDF, 3.35 MB

english, 2015

22

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

Wei Zhang,, Ying Hu,, Ting-Chang Chang,, Kuan-Chang Chang,, Tsung-Ming Tsai,, Hsin-Lu Chen,, Yu-Ting Su,, Tian-Jian Chu,, Min-Chen Chen,, Hui-Chun Huang,, Wan-Ching Su,, Jin-Cheng Zheng,,

Journal:

IEEE Electron Device Letters

Année:

2015

Langue:

english

Fichier:

PDF, 745 KB

english, 2015

23

Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory

Chen, Po-Hsun, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Pan, Chih-Hung, Chu, Tian-Jian, Chen, Min-Chen, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 625 KB

english, 2016

24

The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid

Chen, Huey-Ru, Chen, Ying-Chung, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Shih, Chih-Cheng, Tseng, Yi-Ting, Lin, Chih-Yang, Lin, Hua-Ching

Journal:

IEEE Electron Device Letters

Année:

2015

Langue:

english

Fichier:

PDF, 553 KB

english, 2015

25

Ultra-low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-based Resistance Random Access Memory

Shih, Chih-Cheng, Chen, Wen-Jen, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Tseng, Yi-Ting, Wu, Cheng-Hsien, Su, Wan-Ching, Chen, Min-Chen, Huang, Hui-Chun, Wang, Ming-Hui

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 584 KB

english, 2016

26

Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory

Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Po-Hsun, Chen, Min-Chen, Sze, Simon M.

Journal:

Applied Physics Express

Année:

2016

Langue:

english

Fichier:

PDF, 792 KB

english, 2016

27

Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode

Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Shih, Chih-Cheng, Lin, Chih-Yang, Chen, Po-Hsun, Wu, Huaqiang, Deng, Ning, Qian, He, Sze, Simon M.

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 1.82 MB

english, 2016

28

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Su, Yu-Ting, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Hsin-Lu, Chen, Min-Chen, Yang, Chih-Cheng, Huang, Hui-Chun, Lo, Ikai, Zheng, Jin-Cheng, Sze, Simon M.

Journal:

Japanese Journal of Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 764 KB

english, 2017

29

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

Wang, Zhuo-Rui, Su, Yu-Ting, Li, Yi, Zhou, Ya-Xiong, Chu, Tian-Jian, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Sze, Simon M., Miao, Xiang-Shui

Journal:

IEEE Electron Device Letters

Année:

2017

Langue:

english

Fichier:

PDF, 738 KB

english, 2017

30

Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM

Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Lin, Wen-Yan, Chen, Min-Chen, Sze, Simon M.

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2016

31

Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications

Chen, Huey-Ru, Chen, Ying-Chung, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chu, Tian-Jian, Shih, Chih-Cheng, Chuang, Nai-Chuan, Wang, Kao-Yuan

Journal:

Nanoscale Research Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.63 MB

english, 2016

32

Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory

Wu, Cheng-Hsien, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Chu, Tian-Jian, Pan, Chih-Hung, Su, Yu-Ting, Chen, Po-Hsun, Lin, Shih-Kai, Hu, Shih-Jie, Sze, Simon M.

Journal:

Applied Physics Express

Année:

2017

Langue:

english

Fichier:

PDF, 856 KB

english, 2017

33

Inert Pt electrode switching mechanism after controlled polarity-forming process in In 2 O 3 -based resistive random access memory

Wu, Cheng-Hsien, Pan, Chih-Hung, Chen, Po-Hsun, Chang, Ting-Chang, Tsai, Tsung-Ming, Chang, Kuan-Chang, Shih, Chih-Cheng, Chi, Ting-Yang, Chu, Tian-Jian, Wu, Jia-Ji, Du, Xiaoqin, Zheng, Hao-Xuan, Sze,

Journal:

Applied Physics Express

Année:

2017

Langue:

english

Fichier:

PDF, 1.48 MB

english, 2017

34

Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment

Li, Yaping, Wang, Hui-Qiong, Chu, Tian-Jian, Li, Yu-Chiuan, Li, Xiaojun, Liao, Xiaxia, Wang, Xiaodan, Zhou, Hua, Kang, Junyong, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zheng, Jin-Cheng

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 6.70 MB

english, 2018